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March 1999
FDC6305N
Dual N-Channel 2.5V Specified PowerTrench TM MOSFET
General Description
Features
These N-Channel low threshold 2.5V specified
MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and
yet maintain low gate charge for superior switching
performance.
Applications
? Load switch
? DC/DC converter
? Motor driving
?
?
?
?
?
2.7 A, 20 V. R DS(ON) = 0.08 ? @ V GS = 4.5 V
R DS(ON) = 0.12 ? @ V GS = 2.5 V
Low gate charge (3.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R DS(ON) .
SuperSOT TM -6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D2
D1
S1
G2
4
5
3
2
SuperSOT -6
TM
G1
S2
6
1
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
20
± 8
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
2.7
A
- Pulsed
8
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
.305
Device
FDC6305N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
? 1999 Fairchild Semiconductor Corporation
FDC6305N, Rev. C
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相关PDF资料
FDC6306P MOSFET P-CHAN DUAL 20V SSOT6
FDC6310P MOSFET P-CH DUAL 20V SSOT-6
FDC6312P MOSFET P-CH DUAL 20V SSOT-6
FDC6318P MOSFET P-CH DUAL 12V SSOT-6
FDC6320C MOSFET N/P-CH DUAL 25V SSOT6
FDC6321C MOSFET N/P-CH DUAL 25V SSOT-6
FDC6327C MOSFET N/P-CH DUAL 20V SSOT-6
FDC6333C MOSFET N-CH/P-CHAN 30V SSOT6
相关代理商/技术参数
FDC6305N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
FDC6305N_Q 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6306P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6306P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDC6306P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6
FDC6306P_D87Z 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6306P_NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET P-CH 20V 1.9A 6-Pin SuperSOT T/R
FDC6306P_Q 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube